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Sensors | Free Full-Text | A 0.3 V PNN Based 10T SRAM with Pulse Control Based Read-Assist and Write Data-Aware Schemes for Low Power Applications
Butterfly Conventional 6T SRAM cell Introduction Waveform of write operation Proposed 6T SRAM cell Conclusions References Write
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Electronics | Free Full-Text | Channel Length Biasing for Improving Read Margin of the 8T SRAM at Near Threshold Operation
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